tpca8030-h TOSHIBA Semiconductor CORPORATION, tpca8030-h Datasheet - Page 2

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tpca8030-h

Manufacturer Part Number
tpca8030-h
Description
Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos V-h
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Thermal Characteristics
Marking
Thermal resistance, channel to case
Thermal resistance, channel to ambient
(t = 10 s)
Thermal resistance, channel to ambient
(t = 10 s)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5:
TPCA
8030-H
(Note 5)
* Weekly code: (Three digits)
DD
= 24 V, T
Characteristic
(a)
ch
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the year)
Part number
= 25°C (initial), L = 100 μH, R
Lot No.
(Tc = 25℃)
25.4 × 25.4 × 0.8
(Note 2a)
(Note 2b)
FR-4
(Unit: mm)
R
R
R
Symbol
th (ch-c)
th (ch-a)
th (ch-a)
2
G
Max
4.17
44.6
78.1
= 25 Ω, I
(b) Device mounted on a glass-epoxy board (b)
°C/W
°C/W
°C/W
Unit
AR
= 24 A
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
TPCA8030-H
2008-06-20

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