tpca8107-h TOSHIBA Semiconductor CORPORATION, tpca8107-h Datasheet - Page 5

• Manufacturer Part Number: tpca8107-h
• Description: Toshiba Field Effect Transistor Silicon P-channel Mos Type Ultra-high-speed U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
−50
−40
−30
−20
−10
10
50
40
30
20
10
−0.1
−80
0
0
0
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
V GS = −4.5 V
Common source
I D = −7.5 A
Ta = 25°C
Pulse test
V DS
−40
Drain-source voltage V
Ambient temperature Ta (
Total gate charge Q
10
−10 V
Dynamic input/output
Capacitance – V
−1
0
characteristics
R
V GS
DS (ON)
20
−8
−16
40
I D = −7.5 A
– Ta
I D = −1.9/−3.8/−7.5A
30
V DD = −32 V
−10
80
g
DS
DS
(nC)
−3.8
40
°
120
(V)
C)
C oss
C rss
C iss
−1.9
−100
160
50
−20
−16
−12
−8
−4
0
5
−100
−0.1
−2.0
−1.6
−1.2
−0.8
−0.4
−10
−1
−80
0
0
Common source
Ta = 25°C
Pulse test
Common source
V DS = −10 V
I D = −1 mA
Pulse test
Drain-source voltage V
Ambient temperature Ta (
−40
0.2
0.4
0
−1
I
DR
V
th
– V
0.6
40
– Ta
DS
−10
V GS = 0 V
0.8
80
DS
−4.5
TPCA8107-H
°
(V)
C)
−3
120
1.0
2006-01-17
160
1.2