tpca8a01-h TOSHIBA Semiconductor CORPORATION, tpca8a01-h Datasheet - Page 5

• Manufacturer Part Number: tpca8a01-h
• Description: ?oshiba Field Effect Transistor With Built-in Schottky Barrier Diode Silicon N-channel Mos Type Ultra-high-speed U-mos ?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
12
10
50
40
30
20
10
−80
8
4
0
1
0
0.1
0
V DS = 24V
12
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
6
V GS = 4.5 V
V GS = 10 V
−40
Drain-source voltage V
Ambient temperature Ta (°C)
Total gate charge Q
8
Dynamic input/output
Capacitance − V
0
1
characteristics
R
DS (ON)
V GS
16
40
V DD = 12 V
I D = 9A18A,36A
6
− Ta
24
I D = 9A18A,36A
80
10
g
DS
DS
Common source
I D = 36 A
Ta = 25°C
Pulse test
(nC)
32
(V)
120
C iss
24
C oss
C rss
160
100
40
20
16
12
8
4
0
5
1000
100
0.1
10
−80
1
3
2
1
0
0
10
−40
Drain-source voltage V
Ambient temperature Ta (°C)
−0.2
5
0
−0.4
I
DR
V
th
− V
40
− Ta
4.5
DS
−0.6
V GS = 0 V
80
DS
Common source
V DS = 10 V
I D = 1 mA
Pulse test
Common source
Ta = 25°C
Pulse test
TPCA8A01-H
−0.8
(V)
120
2007-04-10
−1.0
160