buk95r2-40b NXP Semiconductors, buk95r2-40b Datasheet - Page 3

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buk95r2-40b

Manufacturer Part Number
buk95r2-40b
Description
Buk95/96/9e3r2-40b Trenchmos Tm Logic Level Fet
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
9397 750 12049
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P der
(%)
T
10 4
10 3
10 2
120
I D
(A)
mb
10
80
40
P
1
0
function of mounting base temperature.
der
10 -1
= 25 C; I
0
=
---------------------- -
P
tot 25 C
P
DM
tot
50
single pulse.
100%
100
Limit R DSon = V DS / I D
Capped at 100 A due to package
150
T mb ( C)
1
03na19
Rev. 04 — 14 November 2003
200
Fig 2. Continuous drain current as a function of
V
I D
250
200
150
100
GS
(A)
50
0
mounting base temperature.
BUK95/96/9E3R2-40B
0
5 V
Capped at 100 A due to package
DC
10
50
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
100
V DS (V)
150
t p = 10 s
10 ms
100 ms
100 s
1 ms
T mb (˚C)
03nh36
03nh38
10 2
200
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