buk9215 NXP Semiconductors, buk9215 Datasheet - Page 2

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buk9215

Manufacturer Part Number
buk9215
Description
Buk9215-55a Trenchmos Tm Logic Level Fet
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
9397 750 08633
Product data
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
W
D
D
DM
DR
DRM
DS
tot
j
DS
DGR
GS
tot
stg
j
DSon
DSS
Current is limited by power dissipation chip rating
Continuous current is limited by bond wires
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
reverse drain current (DC)
pulsed reverse drain current
non-repetitive avalanche energy
Quick reference data
Limiting values
Rev. 01 — 16 August 2001
Conditions
T
T
T
T
T
Conditions
T
Figure 2
T
T
Figure 3
T
T
T
unclamped inductive load; I
V
starting T
R
mb
mb
j
j
j
mb
mb
mb
mb
mb
mb
DS
GS
= 25 C; V
= 25 C; V
= 25 C; V
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 20 k
55 V; V
and
j
= 25 C
GS
GS
GS
3
Figure 1
GS
GS
GS
= 5 V; I
= 4.5 V; I
= 10 V; I
GS
= 5 V; R
= 5 V
= 5 V;
= 5 V;
p
p
D
D
= 25 A
D
GS
10 s;
10 s
Figure 2
= 25 A
= 25 A
D
= 50 ;
= 62 A;
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
[1]
[1]
[2]
[1]
[1]
[2]
BUK9215-55A
Typ
-
-
-
-
13
-
11
Min
-
-
-
-
-
-
-
-
-
-
-
-
55
55
Max
55
62
115
175
15
16.6
13.6
Max
55
55
62
55
44
248
115
+175
+175
62
55
248
211
15
Unit
V
A
W
m
m
m
Unit
V
V
V
A
A
A
A
W
A
A
A
mJ
C
C
C
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