buk7508 NXP Semiconductors, buk7508 Datasheet - Page 3

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buk7508

Manufacturer Part Number
buk7508
Description
Buk7508-55a; Buk7608-55a Trenchmos Tm Standard Level Fet
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
9397 750 09091
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P
T
P der
(%)
der
mb
function of mounting base temperature.
120
100
80
60
40
20
= 25 C; I
0
=
0
---------------------- -
P
10 3
I D
10 2
(A)
10
tot 25 C
1
P
25
1
tot
DM
Capped at 75 A due to package
50
single pulse.
100%
75
100
R DSon = V DS / I D
125
150
T mb (ºC)
175
03na19
200
Rev. 02 — 17 January 2002
BUK7508-55A; BUK7608-55A
DC
10
Fig 2. Continuous drain current as a function of
V
GS
I D
(A)
mounting base temperature.
140
120
100
80
60
40
20
0
4.5 V
25
Capped at 75 A due to package
50
V DS (V)
75
TrenchMOS™ standard level FET
100
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
125
t p = 10 µs
100 µs
10 ms
100 ms
1 ms
150
03nh48
175
T mb (ºC)
10 2
200
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