buk7508 NXP Semiconductors, buk7508 Datasheet - Page 5

• Manufacturer Part Number: buk7508
• Description: Buk7508-55a; Buk7608-55a Trenchmos Tm Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
8. Characteristics
Table 5:
T
9397 750 09091
Product data
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
DSS
GSS
d(on)
r
d(off)
f
j
d
s
(BR)DSS
GS(th)
DSon
iss
oss
rss
g(tot)
gs
gd
= 25 C unless otherwise specified
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
total gate charge
gate-to-source charge
gate-to-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
Conditions
I
Figure 9
V
V
V
Figure 7
V
I
V
f = 1 MHz;
V
V
from drain lead 6 mm from
package to centre of die
from contact screw on
mounting base to centre of
die SOT78
from upper edge of drain
mounting base to centre of
die SOT404
from source lead to source
bond pad
D
D
D
DS
GS
GS
GS
GS
DD
GS
T
T
T
T
T
T
T
T
T
= 0.25 mA; V
= 1 mA; V
= 25 A;
j
j
j
j
j
j
j
j
j
= 55 V; V
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 20 V; V
= 10 V; I
= 25 C
= 175 C
= 0 V; V
= 0 V; V
= 30 V; R
= 5 V; R
Rev. 02 — 17 January 2002
and
Figure 14
Figure 12
BUK7508-55A; BUK7608-55A
DS
DD
DS
G
D
8
GS
L
= 10 ;
= 25 A;
DS
= V
GS
= 44 V;
= 25 V;
= 1.2 ;
= 0 V
= 0 V
= 0 V
GS
;
Min
55
50
2
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TrenchMOS™ standard level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Typ
-
-
3
-
-
0.05
-
2
6.8
-
76
16
35
3264
719
390
24
94
100
80
4.5
3.5
2.5
7.5
Max
-
-
4
-
4.4
10
500
100
8
16
-
-
-
4352
863
533
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
nA
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
nH
5 of 14
A
A