buk7212 NXP Semiconductors, buk7212 Datasheet - Page 5

• Manufacturer Part Number: buk7212
• Description: Buk7212-55b Trenchmos Tm Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
6. Characteristics
Table 5:
T
9397 750 12229
Product data
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
d
s
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
r
= 25 C unless otherwise specified.
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
Conditions
I
Figure 9
V
V
V
Figure 7
V
I
V
f = 1 MHz;
V
V
measured from drain to
center of die
measured from source lead
to source bond pad
I
Figure 15
I
V
D
D
D
S
S
DS
GS
GS
GS
GS
DS
GS
GS
T
T
T
T
T
T
T
T
T
= 18 A; V
= 20 A; dI
= 0.25 mA; V
= 1 mA; V
= 25 A;
j
j
j
j
j
j
j
j
j
= 55 V; V
= 25 V; R
= 25 C
= 55 C
= 25 C
= 185 C
= 55 C
= 25 C
= 185 C
= 20 V; V
= 10 V; I
= 25 C
= 185 C
= 10 V; V
= 0 V; V
= 10 V; R
= 10 V; V
Rev. 01 — 23 January 2004
and
Figure 14
Figure 12
GS
S
DS
DS
D
/dt = 100 A/ s
8
GS
DS
L
G
= 25 A;
= 0 V;
DS
DS
= V
= 1.2 ;
GS
= 25 V;
= 10
= 0 V
= 44 V;
= 0 V
= 30 V
= 0 V
GS
;
Min
55
50
2
0.9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TrenchMOS™ standard level FET
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BUK7212-55B
Typ
-
-
3
-
-
0.02
-
2
10.2
-
35
9
12
1840
379
165
18
91
48
45
2.5
7.5
0.85
67
65
Max
-
-
4
-
4.4
1
500
100
12
25
-
-
-
2453
455
226
-
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
nA
m
m
nC
nC
nC
pF
pF
pF
nS
nS
nS
nS
nH
nH
V
ns
nC
5 of 12
A
A