buk7225 NXP Semiconductors, buk7225 Datasheet - Page 6

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buk7225

Manufacturer Part Number
buk7225
Description
Buk7225-55a Trenchmos Tm Standard Level Fet
Manufacturer
NXP Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
buk7225-55A
Manufacturer:
NXP
Quantity:
60 000
Table 5:
T
Philips Semiconductors
9397 750 08222
Product specification
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
R DSon
= 25 C
(m )
= 25 C
function of drain-source voltage; typical values.
of drain current; typical values.
I D
(A)
Characteristics
60
50
40
30
20
10
180
160
140
120
100
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
0
80
60
40
20
0
0
0
20
5.5
2
6
40
V GS (V)=
6.5
…continued
60
4
7
12
80
6
8
14
100
V GS (V) = 10
16
8
120
V DS (V)
I D (A)
Conditions
I
I
V
18
03nb72
S
Figure 15
S
GS
03nb71
= 20 A; V
= 20 A; dI
140
= 10 V; V
10
11
8.5
20
9.5
6.5
5.5
4.5
7.5
Rev. 01 — 17 April 2001
GS
S
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain source on-state resistance
T
j
a
= 25 C; I
a
=
of gate-source voltage; typical values.
factor as a function of junction temperature.
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
R DSon
2
1
0
--------------------------- -
R
(m )
-60
DSon 25 C
35
30
25
20
15
10
R
DSon
6
D
Min
-20
= 25 A
8
TrenchMOS™ standard level FET
20
10
BUK7225-55A
Typ
0.85
49
102
60
12
© Philips Electronics N.V. 2001. All rights reserved.
14
100
16
140
Max
1.2
T j ( o C)
03ne89
18
V GS (V)
03nb70
180
20
Unit
V
ns
nC
6 of 13

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