buk7907 NXP Semiconductors, buk7907 Datasheet - Page 6

• Manufacturer Part Number: buk7907
• Description: Buk7907-55ate Trenchplus Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
8. Characteristics
Table 5:
T
9397 750 09876
Product data
Symbol
Static characteristics
V
V
I
V
I
R
V
S
V
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
j
(BR)DSS
GS(th)
(BR)GSS
F
F
hys
DSon
iss
oss
rss
g(tot)
gs
gd
= 25 C unless otherwise specified.
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source breakdown
voltage
gate-source leakage current
drain-source on-state
resistance
forward voltage, temperature
sense diode
temperature coefficient
temperature sense diode
forward voltage hysteresis
total gate charge
gate-source charge
gate-to-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
temperature sense diode
Conditions
I
Figure 9
V
I
V
V
Figure 7
V
I
V
f = 1 MHz;
V
V
D
D
G
I
I
125 A < I
D
55 C < T
F
F
55 C < T
GS
DS
GS
GS
GS
DD
GS
T
T
T
T
T
T
T
T
T
T
T
= 0.25 mA; V
= 1 mA; V
= 25 A;
= 1 mA;
= 250 A
= 250 A;
j
j
j
j
j
j
j
j
j
j
j
= 55 V; V
= 10 V; V
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 10 V; V
= 25 C
= 175 C
= 10 V; I
= 25 C
= 175 C
= 0 V; V
= 30 V; R
= 10 V; R
Rev. 02 — 16 July 2002
and
j
Figure 14
j
F
Figure 12
< 175 C
< 175 C
DS
DS
< 250 A
D
8
GS
DS
L
G
= 50 A;
DS
= V
GS
= 25 V;
= 1.2 ;
= 10
= 0 V
= 25 V;
= 0 V
= 0 V
GS
;
Min
55
50
2
1
-
-
-
20
-
-
-
-
648
25
-
-
-
-
-
-
-
-
-
-
1.4
BUK7907-55ATE
TrenchPLUS standard level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Typ
-
-
3
-
-
0.1
-
22
22
-
5.8
-
658
32
116
19
50
4500
960
510
36
115
159
111
1.54
Max
-
-
4
-
4.4
10
250
-
1000
10
7
14
668
50
-
-
-
-
-
-
-
-
-
-
1.68
Unit
V
V
V
V
V
V
nA
m
m
mV
mV/K
mV
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
6 of 15
A
A
A