buk7735 NXP Semiconductors, buk7735 Datasheet - Page 6

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buk7735

Manufacturer Part Number
buk7735
Description
Buk7735-55a N-channel Trenchmos Tm Standard Level Fet
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
9397 750 13324
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
T
T
j
j
I D
(A)
= 25 C
= 25 C
120
100
80
60
40
20
function of drain-source voltage; typical values.
of drain current; typical values.
R DSon
0
(m )
0
80
70
60
50
40
30
20
0
5.5
2
20
6 6.5 7
V GS (V) =
4
40
12
6
14
8
V GS (V) =
60
16
8
9
18
V DS (V)
80
10
03nb81
I D (A)
03nb82
10
11
10.5
Rev. 02 — 7 June 2004
9.5
8.5
7.5
6.5
20
5.5
4.5
100
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain source on-state resistance
T
j
a
= 25 C; I
a
=
of gate-source voltage; typical values.
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
factor as a function of junction temperature.
N-channel TrenchMOS™ standard level FET
R DSon
2
1
0
--------------------------- -
R
(m )
-60
50
45
40
35
30
25
20
DSon 25 C
R
DSon
5
D
= 20 A
-20
20
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10
BUK7735-55A
60
100
15
140
T
V GS (V)
j
(
03nc24
o
C)
03nb80
180
20
6 of 12

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