tpcf8201 TOSHIBA Semiconductor CORPORATION, tpcf8201 Datasheet - Page 2

• Manufacturer Part Number: tpcf8201
• Description: Field Effect Transistor Silicon N Channel Mos Type U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Thermal Characteristics
Marking (Note 5)
Thermal resistance,
channel to ambient
(t = 5 s)
Thermal resistance,
channel to ambient
(t = 5 s)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: a) The power dissipation and thermal resistance values are shown for a single device.
Note 4: V
Note 5: Repetitive rating: Pulse width limited by maximum channel temperature
Note 6: “●” on the lower left of the marking indicates Pin 1.
(or abbreviation code)
b) The power dissipation and thermal resistance values are shown for a single device.
DD
(Note 2a) Single-device value at
(Note 2b) Single-device value at
(During single-device operation, power is only applied to one device.)
(During dual operation, power is evenly applied to both devices.)
Part No.
= 16 V, T
Characteristics
Pin #1
Lot code (month)
Single-device operation
dual operation (Note 3b)
Single-device operation
dual operation (Note 3b)
25.4
ch
(a)
F4A
= 25°C (initial), L = 0.5 mH, R
Lot code
(year)
(Note 3a)
(Note 3a)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Lot No.
25.4 × 25.4 × 0.8
Product-specific code
R
R
R
R
FR-4
th (ch-a) (1)
th (ch-a) (2)
th (ch-a) (1)
th (ch-a) (2)
(Unit: mm)
Symbol
G
2
= 25 Ω, I
111.6
235.8
378.8
92.6
Max
(b) Device mounted on a glass-epoxy board (b)
AR
°C/W
°C/W
Unit
= 1.5 A
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
TPCF8201
2007-01-16