tpcf8107 TOSHIBA Semiconductor CORPORATION, tpcf8107 Datasheet - Page 3

• Manufacturer Part Number: tpcf8107
• Description: Mosfets Silicon P-channel Mos U-mos
• Manufacturer: TOSHIBA Semiconductor CORPORATION

6. 6. 6. 6. Electrical Characteristics (T
6.1.
6.1.
6.2.
6.2.
6.3.
6.3.
6.4.
6.4.
6.1.
6.1. Static Characteristics
6.2.
6.2. Dynamic Characteristics
6.3.
6.3. Gate Charge Characteristics
6.4.
6.4. Source-Drain Characteristics
Electrical Characteristics (T
Electrical Characteristics (T
Electrical Characteristics (T
Note 5: If a forward bias is applied between gate and source, this device enters V
Note 6: Ensure that the channel temperature does not exceed 150.
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Pulsed reverse drain current
Diode forward voltage
Static Characteristics
Static Characteristics
Dynamic Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Gate Charge Characteristics
Source-Drain Characteristics
Source-Drain Characteristics
Static Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Source-Drain Characteristics
source breakdown voltage is lowered in this mode.
Characteristics
Characteristics
Characteristics
Characteristics
(Note 5)
(Note 6)
a a a a
Fig.
Fig.
Fig.
Fig. 6.2.1
= 25    unless otherwise specified)
= 25
= 25
= 25
Symbol
Symbol
Q
C
C
6.2.1
6.2.1
C
6.2.1 Switching Time Test Circuit
Q
t
t
Q
on
off
oss
t
t
gs1
V
V
rss
iss
gd
Symbol
R
r
f
g
(BR)DSS
(BR)DSX
Symbol
DS(ON)
I
I
GSS
DSS
V
V
I
DRP
th
DSF
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
V
See Figure 6.2.1.
Switching Time Test Circuit
V
Switching Time Test Circuit
Switching Time Test Circuit
DS
DD
V
V
I
I
V
V
V
D
D
= -10 V, V

I
GS
DS
DS
GS
GS
DR
3
= -10 mA, V
= -10 mA, V
-24 V, V
= ±20 V, V
= -30 V, V
= -10 V, I
= -4.5 V, I
= -10 V, I
= -6 A, V
Test Condition
Test Condition
Test Condition
Test Condition
GS
GS
D
D
= 0 V, f = 1 MHz
= -10 V, I
GS
GS
GS
D
GS
DS
= -0.1 mA
= -3 A
= -3 A
= 0 V
= 0 V
= 0 V
= 10 V
= 0 V
D
= -6 A
(BR)DSX
Min
-0.8
Min
Min
Min
-30
-21
















mode. Note that the drain-
Typ.
Typ.
Typ.
Typ.
970
170
200
116
7.5
2.4
5.4
29
22
14
33
22







TPCF8107
2010-07-16
Max
±0.1
Max
Max
Max
-2.0
-10
-24
1.2


38
28










Rev.1.0
Unit
Unit
Unit
Unit
mΩ
µA
nC
pF
ns
V
A
V