tpc6006-h TOSHIBA Semiconductor CORPORATION, tpc6006-h Datasheet - Page 3

• Manufacturer Part Number: tpc6006-h
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type Ultra-high-speed U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Source-Drain Ratings and Characteristics
Pulse drain reverse current
Forward voltage (Diode)
Note 1:
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: • on lower left of the marking indicates Pin 1.
Ensure that the channel temperature does not exceed 150°C.
DD
Characteristics
= 24 V, T
(a)
ch
= 25°C (initial), L = 0.5 mH, R
(Note 1)
25.4 × 25.4 × 0.8
FR-4
Unit: (mm)
Symbol
V
I
DRP
DSF
I
DR
G
3
= 3.9 A, V
(Ta = 25°C)
= 25 Ω, I
Test Condition
(b) Device mounted on a glass-epoxy board (b)
GS
AR
⎯
= 0 V
= 3.9 A
(b)
Min
⎯
⎯
25.4 × 25.4 × 0.8
FR-4
Typ.
Unit: (mm)
⎯
⎯
TPC6006-H
2007-12-20
15.6
−1.2
Max
Unit
A
V