tpc6109-h TOSHIBA Semiconductor CORPORATION, tpc6109-h Datasheet - Page 6

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tpc6109-h

Manufacturer Part Number
tpc6109-h
Description
Toshiba Field Effect Transistor Silicon P Channel Mos Type Ultra-high-speed U-mosiii
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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−100
−0.1
−10
−1
−0.1
Curves must be derated
linearly with increase in
temperature.
*: Single-pulse
I D max (Pulse)*
Ta = 25°C
Drain-source voltage V
1000
Safe Operating Area
100
0.1
10
0.001
−1
1
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
10 ms*
0.01
V DSS max
−10
1 ms*
DS
(V)
0.1
−100
Pulse width t
r
th
6
– t
1
w
w
(s)
10
100
(2)
(1)
Single pulse
1000
TPC6109-H
2008-01-15

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