tpc6601 TOSHIBA Semiconductor CORPORATION, tpc6601 Datasheet - Page 4

• Manufacturer Part Number: tpc6601
• Description: Toshiba Transistor Silicon Pnp Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

−0.01
−0.1
−10
−1
−0.1
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
curves must be derated linearly
with increase in temperature.
♦: Single nonrepetitive pulse
I C max (continuous)
I C max (pulsed) ♦
Ta = 25°C
2
Collector-emitter voltage V
10 s♦
). These characteristic
DC operation
(Ta = 25°C)
1000
100
Safe Operating Area
10
0.001
1
−1
100 ms♦
10 ms♦
1 ms♦
0.01
−10
100 μs♦
CE
Transient Thermal Resistance r
(V)
10 μs♦
0.1
−100
Pulse width t
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu
area: 645 mm
1
4
w
2
)
(s)
10
th
– t
w
100
1000
2006-11-10
TPC6601