tpc6603 TOSHIBA Semiconductor CORPORATION, tpc6603 Datasheet - Page 4

• Manufacturer Part Number: tpc6603
• Description: Transistor Silicon Pnp Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

−0.01
−0.1
−10
−1
−0.1
*: Single nonrepetitive pulse
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices are not
mounted on an FR4 board
(glass-epoxy; 1.6 mm thick; Cu
area, 645 mm
These characteristic curves must
be derated linearly with increase
in temperature.
I C max (continuous)
I C max (pulse) *
Ta = 25°C
10 s*
DC operation
(Ta = 25°C）
Collector−emitter voltage V
100 ms*
2
).
1000
100
−1
Safe operating area
10
0.001
10 ms*
1
1 ms*
100 μs*
−10
0.01
CE
10 μs*
(V)
−100
0.1
Curves apply only to limited areas of thermal resistance.
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645
mm
2
Pulse width tw (s)
)
r
th
4
– t
1
w
10
100
1000
2006-11-13
TPC6603