tpcc8076 TOSHIBA Semiconductor CORPORATION, tpcc8076 Datasheet - Page 3

• Manufacturer Part Number: tpcc8076
• Description: Mosfets Silicon N-channel Mos U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

6. 6. 6. 6. Electrical Characteristics
6.1.
6.1.
6.2.
6.2.
6.3.
6.3.
6.4.
6.4.
6.1.
6.1. Static Characteristics (T
6.2.
6.2. Dynamic Characteristics (T
6.3.
6.3. Gate Charge Characteristics (T
6.4.
6.4. Source-Drain Characteristics (T
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Note 5: Ensure that the channel temperature does not exceed 150.
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Reverse drain current (pulsed)
Diode forward voltage
Static Characteristics (T
Static Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Static Characteristics (T
Dynamic Characteristics (T
Gate Charge Characteristics (T
Source-Drain Characteristics (T
Characteristics
Characteristics
Characteristics
Characteristics
(Note 5)
a a a a
Fig.
Fig.
Fig.
Fig. 6.2.1
= 25
= 25
= 25    unless otherwise specified)
= 25
V
V
R
Symbol
Symbol
Symbol
a a a a
(BR)DSS
(BR)DSX
Q
I
I
DS(ON)
C
C
6.2.1
6.2.1
C
6.2.1 Switching Time Test Circuit
Q
GSS
DSS
V
t
t
Q
on
off
= 25
= 25
oss
t
t
gs1
= 25
= 25    unless otherwise specified)
rss
iss
gd
th
r
f
Symbol
g
V
I
DRP
DSF
a a a a
a a a a
= 25
= 25
unless otherwise specified)
unless otherwise specified)
= 25
= 25    unless otherwise specified)
unless otherwise specified)
= 25
= 25
= 25    unless otherwise specified)
= 25
V
V
I
I
V
V
V
V
See Figure 6.2.1.
Switching Time Test Circuit
V
Switching Time Test Circuit
Switching Time Test Circuit
D
D
GS
DS
DS
GS
GS
DS
DD
= 10 mA, V
= 10 mA, V
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
I
= 33 V, V
= 10 V, I
= 10 V, V
DR
= ±16 V, V
= 4.5 V, I
= 10 V, I
3
24 V, V
= 27 A, V
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Test Condition
Test Condition
Test Condition
D
D
GS
GS
D
Test Condition
GS
GS
GS
= 0.3 mA
= 13.5 A
DS
= 13.5 A
= 0 V
= -20 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
GS
= 0 V

= 0 V
D
= 27 A
Min
Min
Min
Min
1.3
33
18
















2500
Typ.
Typ.
Typ.
Typ.
120
430
4.9
3.7
2.9
9.5
7.4
10
48
34







4
TPCC8076
2011-06-06
Max
Max
Max
Max
-1.2
±10
2.3
6.2
4.6
10












81
Rev.2.0
Unit
Unit
Unit
Unit
mΩ
µA
nC
pF
ns
V
A
V