tpcc8102 TOSHIBA Semiconductor CORPORATION, tpcc8102 Datasheet - Page 5

• Manufacturer Part Number: tpcc8102
• Description: Toshiba Field Effect Transistor Silicon P-channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
−30
−20
−10
40
32
24
16
10
−0.1
−80
8
0
0
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
V GS = −10 V
V GS = −4 V
V DS
−40
Drain-source voltage V
Ambient temperature Ta (
Total gate charge Q
−6
Dynamic input/output
Capacitance – V
−1
0
R
characteristics
−12
DS (ON)
V DD = −6 V
40
I D = −15 A
– Ta
−18
I D = −3.8, −7.5, −15 A
−24
−10
80
g
DS
DS
Common source
I D = −15 A
Ta = 25°C
Pulse test
(nC)
−3.8, −7.5
−12
−24
°
(V)
C)
120
C oss
C iss
C rss
−100
160
−30
−12
−8
−4
0
5
−100
−0.1
−2.5
−2.0
−1.5
−1.0
−0.5
−10
−1
−80
0
0
Common source
V DS = −10 V
I D = −1 mA
Pulse test
−40
Drain-source voltage V
Ambient temperature Ta (
0.2
−10
0
−3
0.4
I
DR
V
th
−1
– V
−4
40
– Ta
DS
0.6
80
DS
Common source
Ta = 25°C
Pulse test
V GS = 0 V
0.8
°
(V)
120
C)
TPCC8102
2009-08-06
160
1.0