tpcc8103 TOSHIBA Semiconductor CORPORATION, tpcc8103 Datasheet - Page 2

• Manufacturer Part Number: tpcc8103
• Description: Toshiba Field Effect Transistor Silicon P-channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Thermal Characteristics
Marking
Thermal resistance, channel to case
Thermal resistance, channel to ambient
(t = 10 s)
Thermal resistance, channel to ambient
(t = 10 s)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: * Weekly code: (Three digits)
8 1 0 3
(Note 5)
DD
※
= −24 V, T
Characteristic
(a)
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the year)
ch
Part number
Product-specific code
Lot No.
= 25°C (initial), L = 200 μH, R
(Tc = 25℃)
25.4 × 25.4 × 0.8
(Note 2a)
(Note 2b)
FR-4
(Unit: mm)
R
R
R
Symbol
th (ch-c)
th (ch-a)
th (ch-a)
2
G
Max
180
= 25 Ω, I
4.7
66
(b) Device mounted on a glass-epoxy board (b)
°C/W
°C/W
°C/W
AR
Unit
= −18 A
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
TPCC8103
2009-07-15