pbsm5240pf NXP Semiconductors, pbsm5240pf Datasheet - Page 4

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pbsm5240pf

Manufacturer Part Number
pbsm5240pf
Description
Pbsm5240pf 40 V, 2 A Pnp Low V_cesat Biss Transistor With N-channel Trench Mosfet
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
6. Thermal characteristics
7. Characteristics
PBSM5240PF
Preliminary data sheet
Table 6.
[1]
[2]
Table 7.
T
[1]
Symbol
PNP low V
R
N-channel Trench MOSFET
R
Symbol Parameter
I
I
I
h
V
R
V
V
f
C
CBO
CEO
EBO
T
amb
FE
CEsat
BEsat
BEon
th(j-a)
th(j-a)
CEsat
c
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
Pulse test: t
= 25
°
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
transition frequency
collector capacitance V
C unless otherwise specified.
CEsat
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to ambient
Thermal characteristics
Characteristics for PNP low V
p
≤ 300 μs; δ ≤ 0.02.
(BISS) transistor
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 August 2010
V
Conditions
V
V
T
V
V
V
I
I
I
I
I
I
I
V
I
f = 100 MHz
f = 1 MHz
C
C
B
C
C
B
C
C
j
CB
CB
CE
EB
CE
CE
CE
CB
I
I
I
I
= 150 °C
= −100 mA; I
= −500 mA;
= −50 mA
= −1 A; I
= −500 mA;
= −50 mA
= −1 A; I
= −50 mA;
C
C
C
C
= −40 V; I
= −40 V; I
= −30 V; I
= −5 V; I
= −5 V
= −5 V; I
= −10 V;
= −10 V; I
= −1 mA
= −100 mA
= −500 mA
= −1 A
CEsat
B
B
Conditions
in free air
in free air
C
= −100 mA
= −50 mA
C
40 V, 2 A PNP BISS/Trench MOSFET module
E
E
B
E
= 0 A
= −1 A
B
= 0 A
= 0 A;
= 0 A
= i
transistor
= −1 mA
e
= 0 A;
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[2]
Min
-
-
-
-
300
300
250
160
-
-
-
-
-
-
150
-
Min
-
-
PBSM5240PF
Typ
-
-
-
-
-
-
-
-
−80
−120
−200
240
-
-
-
-
Typ
-
-
© NXP B.V. 2010. All rights reserved.
Max
−100
−50
−100
−100
-
800
-
-
−140
−170
−310
340
−1.1
−1
-
12
Max
95
625
2
.
2
Unit
nA
μA
nA
nA
mV
mV
mV
V
V
MHz
pF
.
Unit
K/W
K/W
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