pbsm5240pf NXP Semiconductors, pbsm5240pf Datasheet - Page 5

• Manufacturer Part Number: pbsm5240pf
• Description: Pbsm5240pf 40 V, 2 A Pnp Low V_cesat Biss Transistor With N-channel Trench Mosfet
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PBSM5240PF
Preliminary data sheet
Table 8.
T
[1]
Symbol
Static characteristics
V
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
V
I
DSS
GSS
d(on)
r
d(off)
f
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
= 25
Pulse test: t
°
C unless otherwise specified.
Characteristics for N-channel Trench MOSFET
Parameter
drain-source breakdown
voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
p
≤ 300 μs; δ ≤ 0.01.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 August 2010
Conditions
I
I
V
V
V
V
V
I
V
V
f = 1 MHz
V
R
V
R
I
D
D
D
S
DS
GS
GS
GS
GS
GS
GS
DS
GS
L
G
T
T
T
T
T
T
T
T
T
= 0.3 A; V
= 10 μA; V
= 0.25 mA; V
= 1 A; V
= 15 Ω;
= 6 Ω
j
j
j
j
j
j
j
j
j
= 30 V; V
= 15 V;
= 25 °C
= −55 °C
= 25 °C
= 150 °C
= −55 °C
= 25 °C
= 150 °C
= ±8 V; V
= 4.5 V; I
= 25 °C
= 150 °C
= 2.5 V; I
= 1.8 V; I
= 4.5 V
= 0 V; V
= 10 V;
40 V, 2 A PNP BISS/Trench MOSFET module
DS
GS
DS
GS
D
D
D
= 15 V;
GS
DS
= 0.2 A
= 0.1 A
= 75 mA
= 0 V
DS
= 25 V;
= 0 V
= 0 V
= 0 V
= V
GS
[2]
PBSM5240PF
Min
30
27
0.45
0.25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
0.7
-
-
-
-
10
390
663
460
550
0.89
0.1
0.2
43
7.7
4.8
4
7.5
18
4.5
0.76
© NXP B.V. 2010. All rights reserved.
Max
-
-
0.95
-
1.15
1
100
±100
460
782
560
730
-
-
-
-
-
-
-
-
-
-
1.2
Unit
V
V
V
V
V
μA
μA
nA
mΩ
mΩ
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
5 of 11