mt58l64v32f Micron Semiconductor Products, mt58l64v32f Datasheet - Page 13

• Manufacturer Part Number: mt58l64v32f
• Description: 2mb 128k X 18, 64k X 32/36 Flow-through Syncburst Sram
• Manufacturer: Micron Semiconductor Products

3.3V I/O AC TEST CONDITIONS
LOAD DERATING CURVES
SyncBurst SRAM timing is dependent upon the capaci-
tive loading on the outputs.
voltage curves.
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
MT58L128L18F_2.p65 – Rev. 6/01
Input pulse levels ................. V
Input rise and fall times ..................................... 1ns
Input timing reference levels ..................... V
Output reference levels ............................ V
Output load ............................. See Figures 1 and 2
The Micron 128K x 18, 64K x 32, and 64K x 36
Consult the factory for copies of I/O current versus
3.3V I/O Output Load Equivalents
Q
Q
351
Z = 50
.................... V
O
Figure 1
Figure 2
+3.3V
V = 1.5V
IH
T
IL
317
5pF
= (V
= (V
50
DD
DD
/2.2) + 1.5V
/2.2) - 1.5V
DD
DD
Q/2.2
/2.2
13
FLOW-THROUGH SYNCBURST SRAM
2.5V I/O AC TEST CONDITIONS
Input pulse levels ............. V
Input rise and fall times ..................................... 1ns
Input timing reference levels ................... V
Output reference levels ............................... V
Output load ............................. See Figures 3 and 4
2.5V I/O Output Load Equivalents
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2Mb: 128K x 18, 64K x 32/36
Q
Q
225Ω
................ V
Z = 50Ω
O
Figure 3
Figure 4
+2.5V
IH
IL
V = 1.25V
= (V
T
= (V
225Ω
5pF
DD
DD
/2.64) + 1.25V
50Ω
/2.64) - 1.25V
©2000, Micron Technology, Inc.
DD
DD
/2.64
Q/2