hat2028rj Renesas Electronics Corporation., hat2028rj Datasheet - Page 2

• Manufacturer Part Number: hat2028rj
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2028R, HAT2028RJ
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Electrical Characteristics
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain
current
Zero gate voltage drain
current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
Rev.5.00 Sep 07, 2005 page 2 of 7
2. 1 Drive operation: When using the glass epoxy board (FR4 40
3. 2 Drive operation: When using the glass epoxy board (FR4 40
4. Value at Tch = 25 C, Rg
5. Pulse test
10 s, duty cycle
Item
Item
HAT2028R
HAT2028RJ
HAT2028R
HAT2028RJ
HAT2028R
HAT2028RJ
HAT2028R
HAT2028RJ
1%
50
V
V
Symbol
R
R
V
Coss
(BR) DSS
(BR) GSS
Crss
Ciss
t
t
I
GS (off)
I
I
I
I
DS (on)
DS (on)
|y
V
d (on)
d (off)
GSS
DSS
DSS
DSS
DSS
t
t
t
DF
rr
fs
r
f
|
I
D (pulse)
Pch
Pch
E
Symbol
I
AP
AR
V
V
Tstg
Min
Tch
1.3
3.3
60
I
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
I
DSS
GSS
DR
20
Note 4
D
Note 4
Note 2
Note 3
Note 1
0.08
0.12
0.88
Typ
280
150
100
55
15
35
45
40
—
—
—
—
—
—
—
—
5
Max
0.16
1.15
40
40
0.1
2.3
0.1
10
—
—
—
—
—
—
—
—
—
—
—
—
10
1
–55 to +150
1.6 mm), PW
1.6 mm), PW
Value
1.37
150
Unit
60
32
—
—
20
4
4
4
2
3
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
V
A
A
A
A
A
I
I
V
V
V
Ta = 125 C
V
I
I
I
V
V
f = 1 MHz
V
V
I
I
di
D
G
D
D
D
F
F
GS
DS
DS
DS
DS
GS
GS
DD
F
= 4 A, V
= 4 A, V
= 10 mA, V
= 2 A, V
= 2 A, V
= 2 A, V
= 100 A, V
/dt = 50 A/ s
= 60 V, V
= 48 V, V
= 10 V, I
= 10 V
= 16 V, V
= 0
= 4 V, I
10 s
10 s
Test Conditions
30 V
GS
GS
GS
GS
DS
D
D
= 0
= 0
= 10 V
= 10 V
= 4 V
= 2 A,
GS
GS
GS
= 1 mA
DS
DS
Unit
= 0
= 0
= 0
mJ
(Ta = 25 C)
(Ta = 25 C)
Note 5
—
—
W
W
V
V
A
A
A
A
= 0
C
C
= 0
Note 5
Note 5
Note 5