hat2028rj Renesas Electronics Corporation., hat2028rj Datasheet - Page 3

• Manufacturer Part Number: hat2028rj
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2028R, HAT2028RJ
Main Characteristics
Rev.5.00 Sep 07, 2005 page 3 of 7
4.0
3.0
2.0
1.0
0.5
0.4
0.3
0.2
0.1
20
16
12
0
8
4
0
0
Drain to Source Saturation Voltage vs.
0
0
0
Drain to Source Voltage
10 V
Gate to Source Voltage
Test Condition:
Power vs. Temperature Derating
Ambient Temperature
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Typical Output Characteristics
Gate to Source Voltage
2
2
50
8 V
6 V
4
4
100
6
6
V
150
GS
Pulse Test
Pulse Test
Ta (°C)
V
V
8
I
= 2.5 V
8
GS
DS
D
0.5 A
1 A
4.5 V
3.5 V
= 2 A
5 V
4 V
3 V
(V)
(V)
200
10
10
0.03
0.01
0.05
0.02
0.01
100
0.3
0.1
Static Drain to Source on State Resistance
0.5
0.2
0.1
30
10
20
16
12
3
1
8
4
0
1
0.1
0.1
0
Drain to Source Voltage
Gate to Source Voltage
Pulse Test
Ta = 25°C
1 shot Pulse
1 Drive Operation
Operation in
this area is
limited by R
Note 6:
Typical Transfer Characteristics
Maximum Safe Operation Area
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.2
0.3
Drain Current
25°C
2
–25°C
vs. Drain Current
0.5
1
DS (on)
4
V
GS
3
1
= 4 V
10 V
Tc = 75°C
6
I
10
2
D
V
Pulse Test
DS
(A)
10 µs
V
V
= 10 V
8
30
GS
DS
5
(V)
(V)
100
10
10