hat2028rj Renesas Electronics Corporation., hat2028rj Datasheet - Page 5

• Manufacturer Part Number: hat2028rj
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2028R, HAT2028RJ
Rev.5.00 Sep 07, 2005 page 5 of 7
20
16
12
8
4
0
0
Source to Drain Voltage
0.0001
0.0001
0.001
0.001
Reverse Drain Current vs.
0.01
0.01
0.4
Source to Drain Voltage
0.1
0.1
10
10
1
1
10 µ
10 µ
V
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
GS
D = 1
D = 1
= 5 V
0.5
0.5
0.8
100 µ
100 µ
1.2
0, –5 V
Pulse Test
1 m
1 m
V
1.6
SD
(V)
10 m
10 m
2.0
Pulse Width PW (S)
Pulse Width PW (S)
100 m
100 m
1
1
θch – f (t) = γ s (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
θch – f (t) = γ s (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
P
P
DM
DM
2.5
2.0
1.5
1.0
0.5
0
25
10
10
Channel Temperature Tch (°C)
Maximum Avalanche Energy vs.
Channel Temperature Derating
PW
PW
T
T
50
100
100
75
D =
D =
1000
1000
PW
PW
100
T
T
I
V
L = 100 µH
duty < 0.1 %
Rg ≥ 50 Ω
AP
10000
10000
DD
= 4 A
= 25 V
125
150