hat2029r Renesas Electronics Corporation., hat2029r Datasheet - Page 3

• Manufacturer Part Number: hat2029r
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2029R
Main Characteristics
Rev.6.00 Sep 07, 2005 page 3 of 7
4.0
3.0
2.0
1.0
0.5
0.4
0.3
0.2
0.1
50
40
30
20
10
0
0
0
Drain to Source Saturation Voltage vs.
0
0
0
Drain to Source Voltage
10 V
Gate to Source Voltage
Test Condition:
Power vs. Temperature Derating
Ambient Temperature
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Typical Output Characteristics
Gate to Source Voltage
2
2
50
6 V
5 V
4 V
4
4
100
6
6
2 A
V
150
GS
Pulse Test
Pulse Test
Ta (°C)
I
V
V
D
8
= 1.5 V
8
GS
DS
= 5 A
1 A
3.5 V
2.5 V
3 V
2 V
(V)
(V)
200
10
10
0.005
0.002
0.03
0.01
0.05
0.02
0.01
100
0.3
0.1
Static Drain to Source on State Resistance
0.2
0.1
30
10
50
40
30
20
10
3
1
0
0.1
0.2
0
Drain to Source Voltage
Gate to Source Voltage
Ta = 25°C
1 shot Pulse
1 Drive Operation
Operation in
this area is
limited by R
Pulse Test
Note 5:
Typical Transfer Characteristics
Maximum Safe Operation Area
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.3
0.5
Drain Current
1
Tc = –25°C
vs. Drain Current
1
DS (on)
1
75°C
2
25°C
V
GS
3
2
= 2.5 V
4 V
3
I
10
D
V
Pulse Test
5
DS
(A)
V
V
= 10 V
4
30
GS
DS
10
10 µs
(V)
(V)
100
20
5