hat2029r Renesas Electronics Corporation., hat2029r Datasheet - Page 4

• Manufacturer Part Number: hat2029r
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2029R
Rev.6.00 Sep 07, 2005 page 4 of 7
0.10
0.08
0.06
0.04
0.02
500
200
100
Static Drain to Source on State Resistance
50
20
10
50
40
30
20
10
0
–40
5
0
0.1
0
V
I
Reverse Drain Current I
Pulse Test
D
Case Temperature
Dynamic Input Characteristics
DS
V
= 7.5 A
0.2
Body-Drain Diode Reverse
GS
4 V
Gate Charge
0
4
= 2.5 V
V
DD
vs. Temperature
Recovery Time
0.5
= 20 V
V
40
10 V
8
DD
5 V
I
D
di / dt = 20 A / µs
V
1 A, 2 A, 5 A
= 5 V
1
= 5 A
GS
10 V
20 V
80
12
= 0, Ta = 25°C
Qg (nc)
2
Tc
2 A
DR
120
16
(°C)
V
5
1 A
GS
(A)
160
20
10
10
8
6
4
2
0
10000
3000
1000
100
500
200
100
300
0.5
50
20
10
30
10
50
20
10
5
2
1
5
0.2
0.1
0
Drain to Source Voltage V
Forward Transfer Admittance vs.
0.2
Switching Characteristics
0.5
Typical Capacitance vs.
Drain to Source Voltage
10
Drain Current
Drain Current I
25°C
t d(off)
0.5
Drain Current
t f
Tc = –25°C
1
t d(on)
20
V
PW = 3 µs, duty ≤ 1 %
GS
75°C
Ciss
Coss
Crss
1
2
t r
= 4 V, V
30
I
2
D
D
V
Pulse Test
5
DS
V
f = 1 MHz
DD
(A)
(A)
GS
= 10 V
40
DS
= 10 V
10
= 0
5
(V)
10
20
50