hat2029r Renesas Electronics Corporation., hat2029r Datasheet - Page 5

• Manufacturer Part Number: hat2029r
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2029R
Rev.6.00 Sep 07, 2005 page 5 of 7
0.0001
0.0001
0.001
0.001
0.01
0.01
0.1
0.1
10
10
1
1
10 µ
10 µ
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
D = 1
D = 1
0.5
0.5
100 µ
100 µ
1 m
1 m
50
40
30
20
10
0
0
Source to Drain Voltage
10 m
10 m
Reverse Drain Current vs.
0.4
Source to Drain Voltage
Pulse Width PW (S)
Pulse Width PW (S)
5 V
100 m
100 m
0.8
1.2
1
1
V
θch – f (t) = γ s (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
θch – f (t) = γ s (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
P
P
GS
DM
DM
=
Pulse Test
V
0, –5
1.6
SD
10
10
V
(V)
PW
PW
2.0
T
T
100
100
D =
D =
1000
1000
PW
PW
T
T
10000
10000