hat2024r Renesas Electronics Corporation., hat2024r Datasheet
hat2024r
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hat2024r Summary of contents
Page 1
... HAT2024R Silicon N Channel Power MOS FET High Speed Power Switching Features Low on-resistance Capable gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> Rev.5.00 Sep 07, 2005 page ...
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... HAT2024R Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. 1 Drive operation: When using the glass epoxy board (FR4 40 3 ...
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... HAT2024R Main Characteristics Power vs. Temperature Derating 4.0 Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics Drain to Source Voltage Drain to Source Saturation Voltage vs. ...
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... HAT2024R Static Drain to Source on State Resistance vs. Temperature 0.20 Pulse Test – Case Temperature Body-Drain Diode Reverse Recovery Time 500 200 100 µ 0.1 0.2 0.5 1 Reverse Drain Current I Dynamic Input Characteristics 5 ...
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... HAT2024R Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation 0.5 0.1 0.01 0.001 0.0001 10 µ 100 µ Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation 0.5 0.1 0.01 0.001 0.0001 10 µ 100 µ Rev.5.00 Sep 07, 2005 page Switching Characteristics 500 ...
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... HAT2024R Switching Time Test Circuit Vin Monitor D.U.T. Vin 50 Ω Rev.5.00 Sep 07, 2005 page Vout Monitor Vin R L Vout d(on) Switching Time Waveform 90% 10% 10% 10% 90% 90 d(off ...
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... Ordering Information Part Name HAT2024R-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Sep 07, 2005 page Package Name MASS[Typ.] FP-8DAV 0.085g ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...