hat2024r Renesas Electronics Corporation., hat2024r Datasheet - Page 4

• Manufacturer Part Number: hat2024r
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2024R
Rev.5.00 Sep 07, 2005 page 4 of 7
0.20
0.16
0.12
0.08
0.04
500
200
100
Static Drain to Source on State Resistance
50
20
10
50
40
30
20
10
0
–40
5
0
0.1
0
I
Reverse Drain Current I
Pulse Test
D
Case Temperature
V
Dynamic Input Characteristics
V
= 5.5 A
DS
0.2
Body-Drain Diode Reverse
GS
Gate Charge
0
2
10 V
= 4 V
vs. Temperature
Recovery Time
0.5
40
4
V
DD
di / dt = 20 A / µs
V
I
D
1 A, 2 A, 5 A
1
GS
V
= 5 A
= 5 V
10 V
20 V
DD
80
= 0, Ta = 25°C
6
Qg (nc)
= 20 V
2
2 A
Tc
10 V
5 V
DR
120
8
1 A
(°C)
5
V
(A)
GS
160
10
10
20
16
12
8
4
0
1000
500
200
100
0.5
0.2
0.1
20
10
50
20
10
20
16
12
5
2
1
8
4
0
0.2
0
0
Source to Drain Voltage
Drain to Source Voltage V
Forward Transfer Admittance vs.
V
Reverse Drain Current vs.
0.4
0.5
Source to Drain Voltage
GS
Typical Capacitance vs.
Drain to Source Voltage
10
25°C
Drain Current I
= 5 V
Drain Current
Tc = –25°C
1
0.8
20
75°C
Coss
Ciss
Crss
2
1.2
30
D
0, –5 V
V
Pulse Test
Pulse Test
5
DS
V
f = 1 MHz
(A)
GS
V
1.6
= 10 V
40
DS
SD
10
= 0
(V)
(V)
2.0
20
50