hat2024r Renesas Electronics Corporation., hat2024r Datasheet - Page 5

• Manufacturer Part Number: hat2024r
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2024R
Rev.5.00 Sep 07, 2005 page 5 of 7
0.0001
0.0001
0.001
0.001
0.01
0.01
0.1
0.1
10
10
1
1
10 µ
10 µ
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
D = 1
D = 1
0.5
0.5
100 µ
100 µ
1 m
1 m
500
200
100
50
20
10
5
0.1
V
PW = 3 µs, duty ≤ 1 %
10 m
10 m
GS
0.2
Switching Characteristics
= 4 V, V
Pulse Width PW (S)
Pulse Width PW (S)
Drain Current
100 m
100 m
0.5
DD
= 10 V
1
t r
t f
1
1
θch – f (t) = γ s (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
θch – f (t) = γ s (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
t d(off)
I
P
P
2
t d(on)
D
DM
DM
(A)
10
10
5
PW
PW
10
T
T
100
100
D =
D =
1000
1000
PW
PW
T
T
10000
10000