hat2200wp-el-e Renesas Electronics Corporation., hat2200wp-el-e Datasheet - Page 2

• Manufacturer Part Number: hat2200wp-el-e
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2200WP
Electrical Characteristics
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
REJ03G1678-0300 Rev.3.00 May 27, 2008
Page 2 of 7
Item
Symbol
V
V
R
R
Coss
(BR)DSS
Crss
Ciss
Qgd
Qgs
t
t
I
I
GS(off)
|y
V
DS(on)
DS(on)
Rg
Qg
d(on)
d(off)
GSS
DSS
t
t
t
DF
rr
fs
r
f
|
Min
100
3.5
—
—
—
—
19
—
—
—
—
—
—
—
—
—
—
—
—
—
2300
0.82
Typ
280
1.3
9.5
4.6
22
23
33
90
32
12
16
31
50
—
—
—
—
8
Max
±0.1
1.07
5.0
28
33
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
Unit
m
m
pF
pF
pF
nc
nc
ns
ns
ns
ns
ns
nc
V
V
V
S
A
A
I
V
V
V
I
I
I
V
V
f = 1 MHz
V
V
I
V
V
R
Rg = 4.7
I
I
di
D
D
D
D
D
F
F
GS
DS
DS
DS
GS
DD
GS
GS
DD
L
F
= 20 A, V
= 20 A, V
= 10 mA, V
= 10 A, V
= 10 A, V
= 10 A, V
= 20 A
/ dt = 100 A/ s
= 3
= 100 V, V
= 10 V, I
= 10 V
= ±20 V, V
= 0
= 50 V
= 10 V
= 10 V, I
Test Conditions
30 V
GS
GS
GS
GS
DS
D
D
GS
= 1 mA
= 10 V
= 0
= 0
= 10 V
= 8 V
= 10 A
GS
DS
(Ta = 25°C)
= 0
= 0
= 0
Note4
Note4
Note4
Note4