hat2200wp-el-e Renesas Electronics Corporation., hat2200wp-el-e Datasheet - Page 5

• Manufacturer Part Number: hat2200wp-el-e
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2200WP
REJ03G1678-0300 Rev.3.00 May 27, 2008
Page 5 of 7
20
16
12
8
4
0
Source to Drain Voltage V
Reverse Drain Current vs.
0.4
Source to Drain Voltage
10 V
0.03
0.01
0.3
0.1
3
1
10
0.8
V
0.5
D = 1
GS
= 0 V, –5 V
1.2
Normalized Transient Thermal Impedance vs. Pulse Width
100
Pulse Test
1.6
SDF
(V)
2.0
1 m
Pulse Width PW (s)
10 m
50
40
30
20
10
0
P
25
DM
ch - c(t) = s (t)
ch - c = 6.25 C/ W, Tc = 25 C
Channel Temperature Tch (°C)
Maximum Avalanche Energy vs.
100 m
Channel Temperature Derating
50
PW
T
75
1
ch - c
100
Tc = 25 C
D =
I
V
duty < 0.1 %
Rg
AP
DD
PW
T
= 20 A
125
= 50 V
50
10
150