hat2200wp-el-e Renesas Electronics Corporation., hat2200wp-el-e Datasheet - Page 4

• Manufacturer Part Number: hat2200wp-el-e
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2200WP
REJ03G1678-0300 Rev.3.00 May 27, 2008
Page 4 of 7
100
Static Drain to Source on State Resistance
250
200
150
100
20
50
10
50
40
30
20
10
50
-25
2
0.1
0
V
Pulse Test
I
Reverse Drain Current I
D
V
DS
Dynamic Input Characteristics
GS
Case Temperature Tc (°C)
= 20 A
Body–Drain Diode Reverse
0
10 V
= 8 V
10
Gate Charge Qg (nc)
25
vs. Temperature
Recovery Time
1
V
20
DS
50
= 100 V
di/dt = 100 A/ s
V
V
1 A, 2 A, 5 A
GS
I
DS
75
50 V
25 V
D
30
= 1 A, 2 A, 5 A
= 0, Ta = 25°C
= 100 V
10
100
50 V
25 V
DR
40
125 150
(A)
V
GS
100
50
20
16
12
8
4
0
10000
3000
1000
1000
300
100
100
100
30
10
10
10
1
1
0.1
0.1
0
Drain to Source Voltage V
Forward Transfer Admittance vs.
V
f = 1 MHz
GS
0.3
t r
Switching Characteristics
= 0
Drain to Source Voltage
Typical Capacitance vs.
10
Drain Current I
Drain Current I
Tc = –25°C
t f
Drain Current
1
1
75°C
20
V
Rg = 4.7 , duty
GS
t d(on)
3
= 10 V, V
t d(off)
30
25°C
10
10
D
D
V
Pulse Test
DS
DS
(A)
(A)
40
= 10 V
30
DS
= 30 V
Coss
1 %
Crss
Ciss
(V)
100
100
50