upa1919 Renesas Electronics Corporation., upa1919 Datasheet
upa1919
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upa1919 Summary of contents
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P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION μ The PA1919 is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay ...
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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF SAFE OPERATING AREA 120 100 100 125 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA - ...
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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 24 P ulsed - 20 = −4 −4 −2 0 1.5 V ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 160 = −4 Pulsed 120 T = 125° 75°C 40 25°C −25° 0. Drain Current - A ...
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DYNAMIC INPUT/OUTPUT CHARACTERISTICS - 5 = −6 − − Gate Charge - ...
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The information in this document is current as of July, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...