upa1919 Renesas Electronics Corporation., upa1919 Datasheet

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upa1919

Manufacturer Part Number
upa1919
Description
P-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA1919.pdf (7 pages)

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Document No. G16298EJ2V0DS00 (2nd edition)
Date Published July 2006 NS CP(K)
Printed in Japan
ORDERING INFORMATION
Marking: TX
ABSOLUTE MAXIMUM RATINGS (T
Remark
DESCRIPTION
directly by a 2.5 V power source.
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1. PW ≤ 10
The
This device features a low on-state resistance and excellent
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R
R
R
DS(on)1
DS(on)2
DS(on)3
μ
PART NUMBER
2. Mounted on FR-4 board of 2500 mm
PA1919 is a switching device, which can be driven
μ
PA1919TE
= 60 mΩ MAX. (V
= 58 mΩ MAX. (V
= 84 mΩ MAX. (V
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
μ
s, Duty Cycle ≤ 1%
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
Note1
A
= 25°C)
Note2
DS
GS
GS
GS
GS
= 0 V)
= 0 V)
SC-95 (Mini Mold Thin Type)
= −4.0 V, I
= −4.5 V, I
= −2.5 V, I
The mark <R> shows major revised points.
PACKAGE
D
D
D
A
= −3.0 A)
= −3.0 A)
= −3.0 A)
= 25°C)
I
FOR SWITCHING
I
D(pulse)
V
V
D(DC)
P
P
T
DATA SHEET
T
DSS
GSS
2
stg
T1
T2
ch
x 1.6 mm, t ≤ 5 sec.
−55 to +150
m6.0
MOS FIELD EFFECT TRANSISTOR
−20
m12
m24
150
0.2
2.0
<R>
°C
°C
W
W
V
V
A
A
0.32
+0.1
–0.05
PACKAGE DRAWING (Unit: mm)
6
1
0.95
2.9 ±0.2
1.9
5
2
EQUIVALENT CIRCUIT
0.95
Gate
Gate
Protection
Diode
μ
1, 2, 5, 6 : Drain
3
4
4
3
PA1919
: Gate
: Source
Source
Drain
0.9 to 1.1
0.65
Body
Diode
0.16
0 to 0.1
+0.1
–0.06
2002

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upa1919 Summary of contents

Page 1

P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION μ The PA1919 is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF SAFE OPERATING AREA 120 100 100 125 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA - ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 24 P ulsed - 20 = −4 −4 −2 0 1.5 V ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 160 = −4 Pulsed 120 T = 125° 75°C 40 25°C −25° 0. Drain Current - A ...

Page 6

DYNAMIC INPUT/OUTPUT CHARACTERISTICS - 5 = −6 − − Gate Charge - ...

Page 7

The information in this document is current as of July, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

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