upa1919 Renesas Electronics Corporation., upa1919 Datasheet - Page 3

• Manufacturer Part Number: upa1919
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
120
100
- 0 .0 1
- 1 0 0
80
60
40
20
- 0 .1
- 1 0
0
- 1
0
FORWARD BIAS SAFE OPERATING AREA
- 0 .1
DERATING
SAFE OPERATING AREA
R
S in g le p u ls e
M o u n te d o n F R − 4 b o a rd o f
2 5 0 0 m m
I
25
D S (o n )
D (D C )
V
T
DS
A
- Ambient Temperature - °C
- Drain to Source Voltage - V
L im ite d (V
50
1000
100
2
10
FACTOR
x 1 .6 m m
1
- 1
1 m
I
D (p u ls e )
75
Single pulse
G S
100
= − 4 .5 V )
OF
10 m
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
A
125
- 1 0
= 25°C)
FORWARD
P W = 1 m s
150
1 0 0 m s
5 s
1 0 m s
Data Sheet G16298EJ2V0DS
100 m
175
- 1 0 0
PW - Pulse Width - s
BIAS
Without board
1
Mounted on FR−4 board of
2500 mm
2.5
1.5
0.5
2
1
0
10
0
2
x 1.6 mm
25
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
100
- Ambient Temperature - °C
Single pulse
Mounted on FR−4 board of
2500 mm
50
75
2
1000
x 1.6 mm, t ≤ 5 sec.
100
125
μ
PA1919
150
175
3