upa1919 Renesas Electronics Corporation., upa1919 Datasheet - Page 5

• Manufacturer Part Number: upa1919
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

160
120
1000
1 6 0
1 2 0
80
40
100
8 0
4 0
0
- 0.01
10
0
1
- 0 .0 1
- 0.1
V
Pulsed
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GS
V
P u ls e d
G S
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
= −4.5 V
t
d(on)
T
SWITCHING CHARACTERISTICS
= − 2 .5 V
A
- 0.1
25°C
t
75°C
= 1 2 5 °C
- 0 .1
d(off)
t
r
I
I
I
− 2 5 °C
D
D
D
2 5 °C
- Drain Current - A
- Drain Current - A
- Drain Current - A
7 5 °
t
f
T
−25°C
A
= 125°C
- 1
- 1
- 1
- 10
V
V
R
- 1 0
D D
G S
G
= 10 W
= −10 V
= −4.0 V
Data Sheet G16298EJ2V0DS
- 100
- 1 0 0
- 10
16 0
12 0
1 0 0 0 0
8 0
4 0
0.01
1 0 0 0
0
- 0.0 1
100
0.1
1 0 0
10
1 0
1
0.4
V
P u lse d
- 0 .1
G S
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
V
f = 1 .0 M H z
V
Pulsed
T
= − 4.0 V
G S
A
G S
= 12 5°C
0.6
V
- 0.1
= 0 V
= 0 V
V
F(S-D)
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
DS
75°C
− 2 5°C
I
- Drain to Source Voltage - V
D
- Source to Drain Voltage - V
- Drain Current - A
0.8
2 5°C
- 1
- 1
1.0
1.2
- 1 0
- 1 0
μ
PA1919
1.4
C
C
C
iss
oss
rss
- 10 0
5
- 1 00
1.6