upa1901 Renesas Electronics Corporation., upa1901 Datasheet
upa1901
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upa1901 Summary of contents
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N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1901 is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...
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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA 100 R Limited DS(on) ...
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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 30 Pulsed 2 0.2 0.4 0 Drain to Source Voltage - V DS GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 1 ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 T = 125 2 Pulsed 0.01 0 Drain Current - ...
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SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 Pulsed 0.1 0.01 0.4 0.6 0 Source to Drain Voltage - V F(S-D) 6 1.2 1.4 Data Sheet G15804EJ1V0DS PA1901 ...
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Data Sheet G15804EJ1V0DS PA1901 7 ...
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The information in this document is current as of June, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...