upa1901 Renesas Electronics Corporation., upa1901 Datasheet - Page 4

• Manufacturer Part Number: upa1901
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
30
25
20
15
10
1.4
0.9
0.4
100
80
60
40
20
5
0
0
0.01
-50
0
Pulsed
V
Pulsed
GS
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
= 4.5 V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0.2
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
T
DS
ch
0.1
I
0
D
- Drain to Source Voltage - V
- Channel Temperature - C
- Drain Current - A
0.4
2.5 V
50
1
0.6
V
I
100
10
D
V
DS
0.8
= 1.0 mA
GS
T
4.0 V
= 10 V
A
= 4.5 V
= 125 C
75 C
25 C
25 C
150
100
1
Data Sheet G15804EJ1V0DS
0.0001
0.01
100
0.001
0.1
10
0.01
100
1
100
0.01
80
60
40
20
0.1
10
0
FORWARD TRANSFER CHARACTERISTICS
1
0.01
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
0
Pulsed
V
V
Pulsed
DS
GS
P ulsed
V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DS
= 10 V
V
= 4.0 V
GS
= 10 V
0.5
0.1
- Gate to Source Voltage - V
0.1
I
I
D
D
- Drain Current - A
- Drain Current - A
1
1
1.5
1
T
A
= 125°C
T
2
10
75°C
25°C
25°C
A
10
= 125°C
T
A
PA1901
75°C
25°C
25°C
= 125 C
2.5
75 C
25 C
25 C
100
100
3