upa1901 Renesas Electronics Corporation., upa1901 Datasheet - Page 5

• Manufacturer Part Number: upa1901
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

100
1000
80
60
40
20
100
0
10
0.01
80
60
40
20
0
0.1
-50
V
Pulsed
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. CHANNEL TEMPERATURE
GS
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Pulsed
I
= 2.5 V
D
= 3.5 A
SWITCHING CHARACTERISTICS
T
ch
0.1
- Channel Temperature - C
0
I
I
D
D
- Drain Current - A
- Drain Current - A
1
50
1
t
t
d(off)
d(on)
t
t
f
r
T
A
10
V
V
R
= 125 C
100
DD
GS
G
V
= 10
75 C
GS
= 10 V
= 4.0 V
25 C
25 C
= 2.5 V
4.0 V
4.5 V
100
Data Sheet G15804EJ1V0DS
150
10
100
80
60
40
20
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
10
0
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
7
6
5
4
3
2
1
0
0.1
0
V
f = 1.0 MHz
I
GS
D
V
= 6.5 A
= 0 V
GS
1
V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
- Gate to Source Voltage - V
DS
- Drain to Source Voltage - V
5
2
Q
1
G
- Gate Charge - nC
V
DD
3
15 V
= 24 V
6 V
I
D
= 3.5 A
4
10
10
5
Pulsed
PA1901
C
C
C
6
oss
rss
iss
15
100
7
5