upa1980 Renesas Electronics Corporation., upa1980 Datasheet
upa1980
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upa1980 Summary of contents
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P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE DESCRIPTION The PA1980 is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching ...
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MOS FET ABSOLUTE MAXIMUM RATINGS (T Drain to Source Voltage ( Gate to Source Voltage ( Drain Current (DC) Note1 Drain Current (pulse) Note2 Total Power Dissipation Channel Temperature Storage Temperature Notes ...
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MOS FET ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Note Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time ...
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MOS FET TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA - 1 ...
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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 8 Pulsed V = –4 –2 –1 0.2 - 0.4 - 0 Drain ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 300 V = –1 Pulsed T 250 200 150 100 50 - 0. Drain Current - A D DRAIN TO SOURCE ON-STATE RESISTANCE ...
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SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 1 0.1 0.01 0.6 0 Source to Drain Voltage - V F(S-D) SCHOTTKY BARRIER DIODE TYPICAL CHARACTERISTICS (T FORWARD CURRENT vs. FORWARD ...
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The information in this document is current as of February, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date ...