upa1980 Renesas Electronics Corporation., upa1980 Datasheet - Page 6

• Manufacturer Part Number: upa1980
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

6
100
300
250
200
150
100
300
250
200
150
100
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
50
1
- 0.01
- 0.1
-50
V
V
Pulsed
Pulsed
GS
G S
V
SWITCHING CHARACTERISTICS
t
t
t
t
f
d(on)
r
GS
d(off)
= –2.5 V, I
= –1.8 V
T
ch
= –1.8 V, I
- Channel Temperature - C
0
I
D
I
- 0.1
D
- Drain Current - A
- Drain Current - A
D
= –1.0 A
V
D
GS
= –0.5 A
- 1
50
= –4.5 V, I
- 1
V
V
R
DD
G S
G
100
T
= 10
D
–25°C
= –10.0 V
= –4.0 V
A
75°C
25°C
= –1.0 A
= 125°C
Data Sheet G16550EJ1V0DS
- 10
- 10
150
1000
300
250
200
150
100
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
- 5
- 4
- 3
- 2
- 1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
10
0
- 0.1
0
0
V
f = 1.0 M H z
I
D
G S
= –2.0 A
V
V
V
0.5
DD
= 0 V
DS
GS
= –4.0 V
–10.0 V
–16.0 V
- Drain to Source Voltage - V
- 2
- Gate to Source Voltage - V
Q
G
- 1
1
- Gate Change - nC
1.5
- 4
- 10
2
I
Pulsed
- 6
D
= –1.0 A
2.5
C
C
C
oss
iss
rss
PA1980
- 100
- 8
3