upa1980 Renesas Electronics Corporation., upa1980 Datasheet - Page 7

• Manufacturer Part Number: upa1980
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

SCHOTTKY BARRIER DIODE TYPICAL CHARACTERISTICS (T
0.01
0.01
TERMINAL CAPACITANCE vs. REVERSE VOLTAGE
0.1
0.1
140
120
100
10
10
FORWARD CURRENT vs. FORWARD VOLTAGE
80
60
40
20
1
1
0
0.6
0
0
V
Pulsed
T
G S
A
V
= 125°C
= 0 V
F(S-D)
0.2
–25°C
SOURCE TO DRAIN DIODE
75°C
25°C
FORWARD VOLTAGE
10
0.8
V
- Source to Drain Voltage - V
V
R
F
- Reverse Voltage - V
0.4
- Forward Voltage - V
20
0.6
1
30
0.8
f = 1.0 MHz
1.2
40
1
Pulsed
Data Sheet G16550EJ1V0DS
1.4
1.2
50
10000
0.001
1000
0.01
100
0.1
10
REVERSE CURRENT vs. REVERSE VOLTAGE
1
0
Pulsed
A
= 25°C)
10
V
R
- Reverse Voltage - V
20
30
T
A
40
= 125°C
–25°C
PA1980
75°C
25°C
50
7