upa1970 Renesas Electronics Corporation., upa1970 Datasheet
upa1970
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upa1970 Summary of contents
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N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1970 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...
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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA 100 PW = ...
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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 10 Pulsed 0.1 0.2 0.3 0 Drain to Source Voltage - V DS GATE CUT-OFF VOLTAGE vs. CHANNEL ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 160 Pulsed 120 T = 125 0.01 0 Drain Current - A D ...
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DYNAMIC INPUT/OUTPUT CHARACTERISTICS 2 0 Gate Charge - 2.5 3 Data Sheet G15934EJ1V0DS PA1970 ...
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Data Sheet G15934EJ1V0DS PA1970 7 ...
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The information in this document is current as of September, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...