upa1970 Renesas Electronics Corporation., upa1970 Datasheet - Page 2

• Manufacturer Part Number: upa1970
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
2
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
0
TEST CIRCUIT 1 SWITCHING TIME
GS( )
Duty Cycle
PG.
= 1 s
CHARACTERISTICS
R
1%
G
D.U.T.
R
V
DD
L
V
Wave Form
V
Wave Form
GS
DS
SYMBOL
R
R
R
V
V
| y
t
t
Q
Q
I
I
DS(on)1
DS(on)2
DS(on)3
C
C
GS(off)
C
V
d(off)
Q
F(S-D)
V
A
GSS
d(on)
DSS
t
t
V
oss
GS
GD
fs
iss
rss
GS
DS
r
f
G
= 25°C)
0
DS
0
|
10%
t
d(on)
90%
Data Sheet G15934EJ1V0DS
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
R
V
V
I
I
D
F
t
DS
GS
DS
DS
GS
GS
GS
DS
GS
DD
GS
DD
GS
on
G
= 2.2 A, V
= 2.2 A
= 10
10% 10%
t
= 20 V, V
= 10 V, I
= 10 V, I
= 10 V
= 10 V, I
= 12 V, V
= 4.5 V, I
= 4.0 V, I
= 2.5 V, I
= 0 V
= 4.0 V
= 4.0 V
r
= 16 V
V
t
GS
d(off)
TEST CONDITIONS
GS
D
D
D
t
D
D
D
GS
off
= 1.0 mA
= 1.0 A
= 1.0 A
90%
DS
= 0 V
= 1.0 A
= 1.0 A
= 1.0 A
= 0 V
90%
t
f
= 0 V
TEST CIRCUIT 2 GATE CHARGE
PG.
MIN.
0.5
1.0
I
G
= 2 mA
50
TYP.
0.97
0.85
160
100
120
3.3
2.3
0.5
1.1
55
57
80
60
40
17
90
D.U.T.
MAX.
107
1.5
10
69
72
10
PA1970
UNIT
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
S
V
A
A
R
V
DD
L