upa1970 Renesas Electronics Corporation., upa1970 Datasheet - Page 3

• Manufacturer Part Number: upa1970
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
120
100
0.01
100
80
60
40
20
0.1
10
0
1
0
0.1
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
R
(V
Single pulse
Mounted on FR-4 board of
5000 mm
DS(on)
GS
25
V
= 4.5 V)
T
DS
limited
A
I
D(DC)
- Ambient Temperature - C
- Drain to Source Voltage - V
2
50
x 1.1 mm
1000
100
I
10
1
D(pulse)
1
1 m
75
100
10 m
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10
A
125
PW = 1 ms
= 25°C)
5 s(2 units)
10 ms
100 ms
5 s(1 unit)
150
P
D
100 m
Data Sheet G15934EJ1V0DS
175
(FET1) : P
100
PW - Pulse Width - s
D
(FET2) = 1:0
1
P
1.2
0.8
0.6
0.4
0.2
D
Single pulse
Mounted on FR-4 board of
5000 mm
1
0
10
(FET1) : P
0
25
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2
x 1.1 mm
T
D
(FET2) = 1:1
A
100
- Ambient Temperature - C
50
Mounted on FR-4 board of
5000 mm
75
1000
2
100
x 1.1 m m, t
2 units
1 unit
125
PA1970
150
5 sec.
175
3