pmwd18un-01 NXP Semiconductors, pmwd18un-01 Datasheet - Page 3

• Manufacturer Part Number: pmwd18un-01
• Description: Dual N-channel Mtrenchmos Ultra Low Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 14719
Product data sheet
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(A)
I
D
P
10
10
(%)
120
10
der
10
80
40
-1
-2
0
2
1
10
function of solder point temperature
T
P
0
sp
der
-1
= 25 C; I
=
------------------------
P
tot 25 C
50
P
DM
tot
Limit R
is single pulse
100 %
100
DSon
= V
DS
/ I
150
D
T
03aa17
sp
1
( C)
200
Rev. 03 — 1 July 2005
DC
Fig 2. Normalized continuous drain current as a
Dual N-channel TrenchMOS ultra low level FET
(%)
I
der
120
80
40
0
V
function of solder point temperature
I
0
der
GS
=
4.5 V
10
-------------------- -
I
D 25 C
I
50
D
100 %
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
100
V
PMWD18UN
DS
10 ms
1 ms
100 ms
1 s
t
p
(V)
= 100 s
150
T
003aaa258
03aa25
sp
( C)
10
200
2
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