k9f5608u0a-ycb0 Samsung Semiconductor, Inc., k9f5608u0a-ycb0 Datasheet - Page 11

• Manufacturer Part Number: k9f5608u0a-ycb0
• Description: Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F5608U0A-YCB0,K9F5608U0A-YIB0
* Step1
When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2
Copy the nth page data of the Block ’A’ in the buffer memory to the nth page of another free block. (Block ’B’)
* Step3
Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block ’B’.
* Step4
Do not erase or program to Block ’A’ by creating an ’invalid Block’ table or other appropriate scheme.
Erase Flow Chart
NAND Flash Technical Notes (Continued)
*
Block Replacement
Erase Error
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
1st
(n-1)th
nth
(page)
1st
(n-1)th
nth
(page)
No
an error occurs.
Read Status Register
Write Block Address
Block A
Block B
Erase Completed
or R/B = 1 ?
I/O 0 = 0 ?
I/O 6 = 1 ?
Write D0h
Write 60h
Start
Yes
Yes
2
1
Buffer memory of the controller.
No
11
Reclaim the Error
Read Flow Chart
No
FLASH MEMORY
Page Read Completed
ECC Generation
Write Address
Verify ECC
Read Data
Write 00h
Start
Yes