k9f5608u0a-ycb0 Samsung Semiconductor, Inc., k9f5608u0a-ycb0 Datasheet - Page 7

• Manufacturer Part Number: k9f5608u0a-ycb0
• Description: Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

MODE SELECTION
NOTE : 1. X can be V
VALID BLOCK
NOTE :
1. The
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block, does not require Error Correction.
AC TEST CONDITION
(K9F5608U0A-YCB0 :TA=0 to 70 C, K9F5608U0A-YIB0:TA=-40 to 85 C, VCC=2.7V~3.6V unless otherwise)
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
Program/Erase Characteristics
K9F5608U0A-YCB0,K9F5608U0A-YIB0
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (3.0V +/-10%)
Output Load (3.3V +/-10%)
Valid Block Number
Input/Output Capacitance
Input Capacitance
Program Time
Number of Partial Program Cycles
in the Same Page
Block Erase Time
is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
program factory-marked bad blocks.
CLE
H
H
X
X
X
X
L
L
L
L
L
K9F5608U0A
3. When GND input is high, spare area is deselected.
2. WP should be biased to CMOS high or CMOS low for standby.
Parameter
ALE
X
Item
H
H
X
X
X
L
L
L
L
L
(1)
IL
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks
Parameter
or V
(
T
Parameter
IH.
A
CE
=25 C, V
H
L
L
L
L
L
L
L
X
X
X
WE
CC
H
H
X
X
X
X
Refer to the attached technical notes for a appropriate management of invalid blocks.
=3.3V, f=1.0MHz)
Symbol
Symbol
N
C
C
I/O
VB
IN
Spare Array
Main Array
RE
H
H
H
H
H
H
X
X
X
X
0V/V
Test Condition
GND
L/H
L/H
L/H
L/H
X
X
X
X
X
X
V
V
CC
(3)
(3)
(3)
(3)
2013
IN
Min
IL
Symbol
(2)
=0V
=0V
t
t
PROG
Nop
BERS
7
0V/V
WP
X
X
H
H
H
X
X
H
H
L
CC
(2)
Data Input
Sequential Read & Data Output
During Read(Busy)
During Program(Busy)
During Erase(Busy)
Write Protect
Stand-by
1 TTL GATE and CL=100pF
1 TTL GATE and CL=50pF
Read Mode
Write Mode
Min
-
-
-
-
Typ.
Min
-
-
-
0.4V to 2.4V
Value
1.5V
5ns
Command Input
Address Input(3clock)
Command Input
Address Input(3clock)
Typ
200
2
-
-
FLASH MEMORY
2048
Max
Max
Mode
10
10
Max
500
2
3
3
. Do not erase or
Blocks
Unit
Unit
pF
pF
cycles
cycles
Unit
ms
s